Silicon with binary elementary cells as a novel class of materials for future photoenergetics
М. К. БахадырхановTashkent State Technical University, Tashkent, UzbekistanA. Sh. MavlyanovTashkent State Technical University, Tashkent, UzbekistanU. Kh. SodikovTashkent State Technical University, Tashkent, UzbekistanM. K. KhakkulovTashkent State Technical University, Tashkent, Uzbekistan
ABI
Abstract
We show the ability to extend the spectral sensitivity range of silicon photoelements due to the formation of nanoscale structures—quantum dots based on the Si2A n B8–n binary elementary cells—both in the bulk and on the surface of the samples that is expected to allow the development of photoelements.