Electrophysical properties of solar polycrystalline silicon and its n +-p structures at elevated temperatures
B. M. AbdurakhmanovArifov Institute of Electronics, the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanL. O. OlimovArifov Institute of Electronics, the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовArifov Institute of Electronics, the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
Results of measurements of electrophysical parameters of polycrystalline silicon (PS) and p-n-junction based on it in the temperature ranges 20–500 and 20–200°C, respectively, are presented. Correlation is found between the temperature dependences of the conductivity, mobility, and concentration of the current carriers in PS and the current generation characteristics in n +-p-structures, including those caused by the impurity photovoltaic effect.