Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction
М. К. БахадырхановTashkent State Technical University, 100095, Tashkent, UzbekistanС. Б. ИсамовTashkent State Technical University, 100095, Tashkent, UzbekistanZ. T. KenzhaevKarakalpak State University, 230112, Nukus, UzbekistanS. KoveshnikovTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Abstract
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.
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