Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. BoltaevTashkent State Technical University, Tashkent, Republic of UzbekistanД. А. ТашмухамедоваTashkent State Technical University, Tashkent, Republic of UzbekistanБ. Е. УмирзаковTashkent State Technical University, Tashkent, Republic of Uzbekistan
ABI
Abstract
It is established that ion implantation in combination with annealing makes it possible to produce regularly arranged nanocrystalline phases and continuous films of metal silicides in the surface region of Si. It is shown that silicide nanocrystals and nanofilms crystallize in the cubic lattice. A model of a Si surface with silicide nanocrystals is developed.
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