Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. УмирзаковBeruni Tashkent State Technical University, Tashkent, 700095, UzbekistanS. J. NimatovBeruni Tashkent State Technical University, Tashkent, 700095, UzbekistanKh. Kh. BoltaevBeruni Tashkent State Technical University, Tashkent, 700095, Uzbekistan
ABI
Аннотация
The chemical composition of the surfaces and surface layers of Si samples used in solar cells are studied using Auger electron spectroscopy (AES). It is shown that the low-energy implantation of Ba and O ions leads to the redistribution of impurity atoms in the surface layer and can prevent impurity atoms adsorbed onto the surface from penetrating inside the sample.
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