Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing
A. A. AbduvayitovIslam Karimov State Technical University, 100095, Tashkent, UzbekistanKh. Kh. BoltaevIslam Karimov State Technical University, 100095, Tashkent, UzbekistanБ. Е. УмирзаковIslam Karimov State Technical University, 100095, Tashkent, UzbekistanД. А. ТашмухамедоваIslam Karimov State Technical University, 100095, Tashkent, UzbekistanG. AbdurakhmanovMirzo Ulugbek National University of Uzbekistan, 100174, Tashkent, Uzbekistan
ABI
Аннотация
A CdTeO3 film is obtained by implanting $${\text{O}}_{2}^{ + }$$ ions into a single-crystal CdTe/Mo(111) film and annealing for 30 min at Т = 800 K. It is established that the valence band of the CdTeO3 film reveals three maxima caused by the excitation of electrons from the 5s electrons of Cd, the 2p electrons of O, and the hybridized levels of 5s Cd + 2p O. Cd–Te–O compounds form in the near-surface layer during the implantation of $${\text{O}}_{2}^{ + }$$ ions with E0 ≥ 10 keV, producing a three-layer CdTe/CdTeO/CdTe nanosystem.
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