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Semiconductor Quantum Structures and Devices

Работ: 469

  1. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1

    СтатьяQuantum and electron transport phenomenaInternational Journal of Modern Physics B2020Цитирований: 20
    ABI

  2. Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    СтатьяSemiconductor Quantum Structures and DevicesModern Physics Letters B2021Цитирований: 16
    ABI

  3. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  4. Modeling the temperature dependence of the density oscillation of energy states in two-dimensional electronic gases under the impact of a longitudinal and transversal quantum magnetic fields

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov +1

    СтатьяSemiconductor Quantum Structures and DevicesIndian Journal of Physics2022Цитирований: 15
    ABI

  5. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    СтатьяSemiconductor Quantum Structures and DevicesIndian Journal of Physics2021Цитирований: 14
    ABI

  6. Influence of a quantizing magnetic field on the Fermi energy oscillations in two-dimensional semiconductors

    U. I. Erkaboev, Ulugbek M. Negmatov, R. G. Rakhimov +2

    СтатьяSemiconductor Quantum Structures and DevicesInternational Journal of Applied Science and Engineering2022Цитирований: 14
    ABI

  7. Determination of the dependence of the two-dimensional combined density of states on external factors in quantum-dimensional heterostructures

    G. Gulyamov, U. I. Erkaboev, R. G. Rakhimov +2

    СтатьяQuantum and electron transport phenomenaModern Physics Letters B2023Цитирований: 14
    ABI

  8. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2007Цитирований: 14
    ABI

  9. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13
    ABI

  10. Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells

    Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

    СтатьяSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B2023Цитирований: 12
    ABI

  11. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 12
    ABI

  12. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    СтатьяQuantum and electron transport phenomenaJournal of the Korean Physical Society2014Цитирований: 11
    ABI

  13. Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

    У. И. Эркабоев, R. G. Rakhimov

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 11
    ABI

  14. Influence of a magnetic field and temperature on the oscillations of the combined density of states in two-dimensional semiconductor materials

    U. I. Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

    СтатьяSemiconductor Quantum Structures and DevicesIndian Journal of Physics2023Цитирований: 11
    ABI

  15. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

    U. I. Erkaboev, R. G. Rakhimov

    СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 11
    ABI

  16. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    СтатьяSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy2023Цитирований: 11
    ABI

  17. The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    СтатьяSurface and Thin Film PhenomenaModern Physics Letters B2016Цитирований: 11
    ABI

  18. A p-i-n Model of CdTe/CdS Heterostructures

    J. Janabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    СтатьяQuantum Dots Synthesis And PropertiesInorganic Materials2005Цитирований: 11
    ABI

  19. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2020Цитирований: 11
    ABI

  20. Influence temperature and strong magnetic field on oscillations of density of energy states in heterostructures with quantum wells Hgcdte/Cdhgte

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    СтатьяSemiconductor Quantum Structures and DevicesE3S Web of Conferences2023Цитирований: 10
    ABI

  21. Temperature dependence of width band gap in <i>In<sub>x</sub>ga<sub>1-X</sub>as</i>quantum well in presence of transverse strong magnetic field

    U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

    СтатьяSemiconductor Quantum Structures and DevicesE3S Web of Conferences2023Цитирований: 10
    ABI

  22. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
    ABI

  23. Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells

    P. J. Baymatov, B. T. Abdulazizov

    СтатьяSemiconductor Quantum Structures and DevicesUkrainian Journal of Physics2017Цитирований: 10
    ABI

  24. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2016Цитирований: 10
    ABI

  25. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI