Flyura Djurabekova
Работ: 12
University of Helsinki, PO Box 43, Helsinki, Finland
Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation
S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1
СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20ABIInvestigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment
Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2
СтатьяSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 13ABIFundamental processes of radiation modification of semiconductor nanostructures
Flyura Djurabekova, Х. Б. Ашуров, С. Е. Максимов +2
СтатьяLuminescence Properties of Advanced MaterialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2013Цитирований: 8ABISynergetic theory of catastrophic failures in the problem of radiation stability of solid-state electronics materials
Б. Л. Оксенгендлер, С. Е. Максимов, N. N. Turaeva +1
СтатьяNuclear Issues and DefenseNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 6ABIEffect of high-dose low-energy reactive-ion implantation on cold cathode properties
Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1
СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 1ABIComputer simulation of ion implantation with visual observation of the implantation profiles
Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1
СтатьяIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)2003Цитирований: 0ABIEpitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method
Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3
СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2011Цитирований: 0ABI