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Y. Miyagawa

Работ: 4

National Industrial Research Institute of Nagoya, Nagoya, Japan

  1. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

    T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 3
    ABI

  2. Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

    Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 1
    ABI

  3. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

    S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

    СтатьяSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 1
    ABI

  4. Dynamic-sasamal: simulation software for high-dose ion implantation

    Y. Miyagawa, H. Nakadate, Flyura Djurabekova +1

    СтатьяIon-surface interactions and analysisSurface and Coatings Technology2002Цитирований: 0
    ABI