F. F. Umarov
Работ: 18
Tashkent State University of Economics
Effect of high-dose low-energy reactive-ion implantation on cold cathode properties
Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1
СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 1ABIOn mechanism of low-energy heavy ions scattering on a target surface with small atomic mass
F. F. Umarov, N. N. Bazarbaev, L. B. Kudryashova +1
СтатьяX-ray Spectroscopy and Fluorescence AnalysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2002Цитирований: 1ABISmall angle ion scattering by structures on the single crystal surface corresponding to initial stages of adsorption
F. F. Umarov, A. M. Rasulov, A.A. Dzhurakhalov
СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1998Цитирований: 0ABIInvestigation of the dynamics of changes of the Cu3 Au(100) surface in the course of ordering by low energy ion scattering
A.A. Dzhurakhalov, F. F. Umarov
Статьяnanoparticles nucleation surface interactionsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2000Цитирований: 0ABIComputer simulation of ion implantation with visual observation of the implantation profiles
Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1
СтатьяIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)2003Цитирований: 0ABIThe ion dechanneling mechanism at grazing scattering on the surface atomic steps
A.A. Dzhurakhalov, B.S. Kalandarov, Uchkun Kutliev +1
СтатьяAdvanced Chemical Physics Studies2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)2003Цитирований: 0ABI<title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>
A. M. Rasulov, A.A. Dzhurakhalov, F. F. Umarov +2
СтатьяIon-surface interactions and analysisProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE2005Цитирований: 0ABI