Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

e-Journal of Surface Science and Nanotechnology

Работ: 10

Журнал · ISSN 1348-0391

  1. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

    U. I. Erkaboev, R. G. Rakhimov

    СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 11
    ABI

  2. Computer Simulation of Scattering Xe<sup>+</sup> Ions from InP(001)❬110❭ Surface at Grazing Incidence

    Karimov Mukhtorjon Karimberganovich, Matchоnov Khusniddin Jamoladdinovich, Otaboeva Kamola Uchkun qizi +1

    СтатьяIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology2019Цитирований: 11
    ABI

  3. Low Energy Ar<sup>+</sup> Ion Scattering on InGaP(001) Surface

    Karimov Mukhtorjon Karimberganovich, Kutliev Uchkun Otoboyevich, Ismailov Shavkat Ko'ziyevich +1

    СтатьяIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology2020Цитирований: 7
    ABI

  4. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 2
    ABI

  5. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1
    ABI

  6. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0
    ABI

  7. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0
    ABI

  8. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0
    ABI

  9. Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

    G. Gulyamov, Gulnoza Majidova, Saodat Madumarova +1

    СтатьяAdvanced Research in Systems and Signal Processinge-Journal of Surface Science and Nanotechnology2024Цитирований: 0
    ABI

  10. Structural, Compositional, and Photoluminescence Properties of CsPbBr<sub>3</sub> Thin Films Grown by Single-source Thermal Vacuum Chemical Vapor Deposition

    R. R. Kabulov, L. O‘. Shuhratova, K. T. Suyarov +2

    СтатьяPerovskite Materials and Applicationse-Journal of Surface Science and Nanotechnology2025Цитирований: 0
    ABI