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A. É. Atamuratov

Работ: 37

Urgench State University, Urgench, Uzbekistan

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
    ABI

  2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials2001Цитирований: 5
    ABI

  4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
    ABI

  5. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
    ABI

  7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4
    ABI

  8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4
    ABI

  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3
    ABI

  10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3
    ABI

  11. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3
    ABI

  12. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    СтатьяSilicon and Solar Cell Technologies2022Цитирований: 2
    ABI

  13. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

    A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

    СтатьяGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 2
    ABI

  14. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2
    ABI

  15. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2
    ABI

  16. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2
    ABI

  17. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Статьяsolar cell performance optimization2023Цитирований: 1
    ABI

  18. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    СтатьяSemiconductor materials and devices2024Цитирований: 1
    ABI

  19. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1
    ABI

  20. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1
    ABI

  21. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali1992Цитирований: 0
    ABI

  22. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    СтатьяElectric Power Systems and Control1995Цитирований: 0
    ABI

  23. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    СтатьяSemiconductor materials and devicesTechnical Physics1997Цитирований: 0
    ABI

  24. Tunable SiO2/Si-based nanostructures

    А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

    СтатьяAdvanced Surface Polishing TechniquesInorganic Materials2009Цитирований: 0
    ABI

  25. Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide

    A. É. Atamuratov

    ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2009Цитирований: 0
    ABI