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Ahmed Yusupov

Работ: 13

Department of Electronics and Radio Engineering, Tashkent University of Information Technologies, A. Temur Str., 108, Tashkent 100200, Uzbekistan

  1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3
    ABI

  2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2
    ABI

  3. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2
    ABI

  4. On the Convergence of an Efficient and Robust Dynamic Neural Network Concept with Application to Solving Traveling Salesman Problems

    Elnur Norov, Shakhzod Tashmetov, Khabibullo Nosirov +3

    СтатьяMetaheuristic Optimization Algorithms ResearchWSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS2022Цитирований: 1
    ABI

  5. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    СтатьяSemiconductor materials and devices2024Цитирований: 1
    ABI

  6. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1
    ABI

  7. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics2020Цитирований: 0
    ABI

  8. Formation and electrical properties of anisotype heterojunctions p-Cu2ZnSnSe4 /n-GaAs

    Ahmed Yusupov, Abdukhalil A. Tulyaganov, Zafar Turaev +2

    СтатьяChalcogenide Semiconductor Thin FilmsDevelopments of Artificial Intelligence Technologies in Computation and Robotics2020Цитирований: 0
    ABI

  9. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0
    ABI

  10. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0
    ABI

  11. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures2024Цитирований: 0
    ABI

  12. From Evolution to Prospects: Mechanisms, Advances, and Challenges of Avalanche Photodiodes

    Ahmed Yusupov, Elaman Nurullaev, K. Sattarov

    СтатьяAdvanced Optical Sensing Technologies2025Цитирований: 0
    ABI

  13. Field-Effect Photodetectors Based on TMDCs: State of the Art and Future Trends

    Ahmed Yusupov, Elaman Nurullaev, K. Sattarov +1

    Статья2D Materials and Applications2025Цитирований: 0
    ABI