Khushnudbek Sh. Saparov

Работ: 1

Department of Physics, Urgench State University, Kh. Olimjan Str., 14, Urgench 220100, Uzbekistan

1. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.439504