Статья

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

A. É. AtamuratovDepartment of Physics, Urgench State University, Kh.Olimjan str.,14, 220100 Urgench, UzbekistanM. M. KhalilloevDepartment of Physics, Urgench State University, Kh.Olimjan str.,14, 220100 Urgench, UzbekistanAhmed YusupovDepartment of Electronics, Tashkent University of Information Technologies, A.Temur str.,108, 100200 Tashkent, UzbekistanAntonio J. García‐LoureiroDepartment of Computational electronics, University of Santiago de Compostela, Praza do Obradoiro, 15782 Santiago de Compostela, SpainJean Chamberlain ChedjouDepartment of Transportation informatics, University of Klagenfurt, 9020 Klagenfurt, AustriaKyandoghere KyamakyaDepartment of Transportation informatics, University of Klagenfurt, 9020 Klagenfurt, Austria

Applied Sciencesjournal2020en

ABI

Аннотация

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect.

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Темы

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

Идентификаторы

DOI: 10.3390/app10155327

Цитирования и источники

Цитирований: 2 Использованных источников: 30

Показатели — AkademScholar