Antonio J. García‐Loureiro

Работ: 4

University of Santiago de Compostella, Ra de Jenaro de la Fuente Domnguez, 15782 -Santiago de Compostela, Spain

1. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2017.article.000161

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.386764

3. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

   A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

   СтатьяSilicon and Solar Cell Technologies2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2022.article.001344

4. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488