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A.E. Abdikarimov

Работ: 13

Urgench State University, Urgench, 220100, Uzbekistan

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  2. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
    ABI

  3. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4
    ABI

  4. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    СтатьяSilicon and Solar Cell Technologies2022Цитирований: 2
    ABI

  5. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2
    ABI

  6. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1
    ABI

  7. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Статьяsolar cell performance optimization2023Цитирований: 1
    ABI

  8. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

    А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

    СтатьяAdvanced Memory and Neural Computing2022Цитирований: 0
    ABI

  9. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    СтатьяSemiconductor materials and devices2022Цитирований: 0
    ABI

  10. Electric conductivity of cotton and its dependence on fiber quality

    A.E. Abdikarimov, Khurshid Bozorov, О. О. Маматкаримов +1

    СтатьяTextile materials and evaluationsAIP conference proceedings2025Цитирований: 0
    ABI

  11. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  12. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0
    ABI

  13. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2026Цитирований: 0
    ABI