A.E. Atamuratov

Работ: 3

Urgech State University, Urgench, 220100, Uzbekistan

1. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511885

2. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

   A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000894

3. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.preprint.001199