D. R. Rajapov

Работ: 3

Department of Physics, Urgench State University, 14, Kh.Alimdjan str., Urgench, 220100, Uzbekistan

1. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.001842

2. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002170

3. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.preprint.001199