Z.A. Atamuratova

Работ: 1

1. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

   A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000894