И. Н. Каримов

Работ: 5

Physics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

   С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

   СтатьяElectromagnetic Effects on MaterialsSolid-State Electronics1995Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.379727

2. Tensor electric properties of n-Si monocrystals

   И. Н. Каримов, A.R. Turaev, A.A. Khlbekov +1

   СтатьяSemiconductor materials and interfaces1995Цитирований: 0

   ABIABI:AkademIndex/openalex/1995.article.000176

3. Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature

   G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1

   СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000540

4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   СтатьяSemiconductor materials and devices2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011220

5. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018