Solid-State Electronics

Работ: 1

Журнал · ISSN 0038-1101

1. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

   С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

   СтатьяElectromagnetic Effects on MaterialsSolid-State Electronics1995Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.379727