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А. Yusupov

Работ: 28

Tashkent University of Information technologies, Tashkent, Uzbekistan

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
    ABI

  2. Increasing Die Durability in Cold Stamping by Quenching with Intermediate Tempering

    D. M. Berdiev, А. Yusupov, R. K. Toshmatov +1

    СтатьяMetallurgy and Material FormingRussian Engineering Research2022Цитирований: 6
    ABI

  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  4. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials2001Цитирований: 5
    ABI

  5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
    ABI

  7. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3
    ABI

  8. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3
    ABI

  9. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    СтатьяSilicon and Solar Cell Technologies2022Цитирований: 2
    ABI

  10. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

    A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

    СтатьяGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 2
    ABI

  11. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2007Цитирований: 1
    ABI

  12. Some electrical and photoelectric characteristics that are promising for photoconverters p-Cu2ZnSnS4/n-Si heterostructures

    А. Yusupov, К. Адамбаев, Zafar Turaev

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2015Цитирований: 1
    ABI

  13. Analyzing metal forming process

    D.M. Berdiyev, А. Yusupov, B.K. Abdulayev

    СтатьяLaser and Thermal Forming TechniquesACADEMICIA An International Multidisciplinary Research Journal2021Цитирований: 1
    ABI

  14. Analysis of common errors and methods of calibration of ultrasonic level meter

    А. Yusupov, U. K. Sabirov, M. Sh. Begijonov +1

    СтатьяFlow Measurement and AnalysisE3S Web of Conferences2023Цитирований: 1
    ABI

  15. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Статьяsolar cell performance optimization2023Цитирований: 1
    ABI

  16. Improving the Wear Resistance of High-Precision Dies

    D. M. Berdiev, А. Yusupov, M. A. Uмаrоvа +1

    СтатьяMetal Alloys Wear and PropertiesRussian Engineering Research2024Цитирований: 1
    ABI

  17. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1
    ABI

  18. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

    А. Yusupov, К. Адамбаев, Zafar Turaev +2

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2017Цитирований: 1
    ABI

  19. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics2020Цитирований: 1
    ABI

  20. Photoelectric Properties of MnSi Films

    К. Адамбаев, А. Yusupov, Komiljon Yakubov

    СтатьяSemiconductor materials and interfacesInorganic Materials2001Цитирований: 1
    ABI

  21. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    СтатьяSemiconductor materials and devicesTechnical Physics1997Цитирований: 0
    ABI

  22. Paramagnetic and thermostimulated centers in YAG and CsBr-In crystals

    A.N. Salakhitdinov, А. Yusupov

    СтатьяSolid State Laser Technologies1999Цитирований: 0
    ABI

  23. Formation of Manganese Silicide Films on Silicon

    К. Адамбаев, А. Yusupov, Komiljon Yakubov

    СтатьяSemiconductor materials and interfacesInorganic Materials2003Цитирований: 0
    ABI

  24. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

    I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

    СтатьяSilicon Effects in AgricultureComputational Materials Science2008Цитирований: 0
    ABI

  25. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

    A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

    Статья2D Materials and Applications2022Цитирований: 0
    ABI