X. Sh. Saparov

Работ: 2

Urgench State University,Physics department,Urgench,Uzbekistan

1. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS₂ based MOSFET

   A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

   СтатьяGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511884

2. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

   A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

   Статья2D Materials and Applications2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.001865