T.A. Atamuratov

Работ: 1

Urgench State University,Physics department,Urgench,Uzbekistan

1. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS₂ based MOSFET

   A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

   СтатьяGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511884