The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
A. É. AtamuratovUrgench State University,Physics department,Urgench,UzbekistanX. Sh. SaparovUrgench State University,Physics department,Urgench,UzbekistanT.A. AtamuratovUrgench State University,Physics department,Urgench,UzbekistanА. YusupovTashkent University of Information Technologies,department of electronics and radiotechniks,Tashkent,UzbekistanFrank SchwierzTechnical University of Ilmenau,department of micro and nanoelectronic systems,Ilmenau,Germany
2021 International Conference on Information Science and Communications Technologies (ICISCT)conference2021en
ABI
Аннотация
In the paper the self-heating effect in a nanoscale planar MOSFET with a two-dimensional MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel is investigated by simulations. The self-heating effect is simulated by using the thermodynamic transport model. Contribution of gate voltage and drain voltages to SHE, particularly to the temperature distribution along the center of channel is considered. It is shown that the temperature distribution along the channel and the temperature at the channel center considerably depend on the gate and drain voltages. The details of this influences is analysed.
Перевод пока недоступен