Статья

Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

A. É. AtamuratovUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanС. З. ЗайнабидиновUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanА. YusupovUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanKh.S. DalievUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanK. M. AdinaevUgrench State University (Al-Khorezmi), 740000, Ugrench, Uzbekistan

Technical Physicsjournal1997en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and interfaces

Идентификаторы

DOI: 10.1134/1.1258904

Цитирования и источники

Цитирований: 0Использованных источников: 5

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