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Integrated Circuits and Semiconductor Failure Analysis

Работ: 142

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. Features of polyatomic ion emission under sputtering of a silicon single crystal by Au− cluster ions

    Sh.Dj. Akhunov, С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 13
    ABI

  3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  4. Thermal spikes observed during the tantalum sputtering by gold cluster ions

    С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2003Цитирований: 12
    ABI

  5. Comparative study of polyatomic secondary ion emission from silicon with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si11.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>Au</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math>, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si12.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>Si</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>C</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> projectiles

    С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2006Цитирований: 11
    ABI

  6. Investigation of Angular Spectrum of Scattered Inert Gas Ions from the InGaP (001) Surface

    М. K. Kаrimov, Uchkun Kutliev, S.B. Bobojonova +1

    СтатьяIon-surface interactions and analysisPhysics and Chemistry of Solid State2021Цитирований: 10
    ABI

  7. High non-additive sputtering of silicon as large positive cluster ions under polyatomic ion bombardment

    S.F. Belykh, У. Х. Расулев, A.V. Samartsev +2

    СтатьяIon-surface interactions and analysisVacuum2000Цитирований: 9
    ABI

  8. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
    ABI

  9. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 8
    ABI

  10. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum2022Цитирований: 8
    ABI

  11. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 7
    ABI

  12. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  13. Investigation of the dose dependence of the amorphization of a Si(111) surface bombarded with low-energy Na+ ions

    S. J. Nimatov, Д. С. Руми

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 6
    ABI

  14. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2018Цитирований: 6
    ABI

  15. Non-linear effects in Ta sputtering by Au− ions

    С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 6
    ABI

  16. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 6
    ABI

  17. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  18. Electron Microscopy and Elemental Composition of the Near-Surface Layer of Electron-Irradiated LiF Crystals

    M. A. Mussaeva, Э. М. Ибрагимова

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2019Цитирований: 5
    ABI

  19. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (b)1968Цитирований: 5
    ABI

  20. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
    ABI

  21. Methods of Determining Reference Signals for One and Multichannel Signatural Analyzer of Microprocessor Systems

    Rustam Хusanovich Djuraev

    СтатьяVLSI and Analog Circuit TestingCommunications2018Цитирований: 4
    ABI

  22. Development of simulation model of smart phase selector device

    E. Khojiakbar, I.Kh. Kholiddinov, Asrorbek Eraliev +2

    СтатьяVLSI and Analog Circuit TestingE3S Web of Conferences2023Цитирований: 4
    ABI

  23. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 4
    ABI

  24. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4
    ABI

  25. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
    ABI