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Integrated Circuits and Semiconductor Failure Analysis

Работ: 142

  1. Effect of coarse-scale surface roughness on transverse electron focusing

    S. A. Korzh

    СтатьяElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics1981Цитирований: 0
    ABI

  2. A method for analysis of low energy backscattering spectra

    V. Hnatowicz, J. Kvítek, Lukáš Pelikán +2

    СтатьяUltrasonics and Acoustic Wave PropagationNuclear Instruments and Methods in Physics Research1982Цитирований: 0
    ABI

  3. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)1982Цитирований: 0
    ABI

  4. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

    С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

    СтатьяSemiconductor materials and interfacesRussian Physics Journal1983Цитирований: 0
    ABI

  5. Effect of impurities on the residual resistivity of refractory metals

    Β. N. Aleksandrov

    СтатьяAdvanced Surface Polishing TechniquesSoviet Journal of Low Temperature Physics1986Цитирований: 0
    ABI

  6. ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

    Yusuke Mizokawa, Osamu Komoda, Tatsuro Miyasato +3

    СтатьяDiamond and Carbon-based Materials ResearchElectronics and Communications in Japan (Part II Electronics)1987Цитирований: 0
    ABI

  7. Ion-Molecular Epitaxy

    A. Lyutovich

    ГлаваSemiconductor materials and devices1987Цитирований: 0
    ABI

  8. Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals

    A. S. Petrov, В. С. Куликаускас, Yu. V. Lilenko +7

    СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1988Цитирований: 0
    ABI

  9. High-frequency properties of point contacts due to nonequilibrium phonon relaxation

    Michael Moskalets

    СтатьяForce Microscopy Techniques and ApplicationsSoviet Journal of Low Temperature Physics1989Цитирований: 0
    ABI

  10. Depth profiles of Sb atoms implanted into Ti

    V. Havránek, V. Hnatowicz, J. Kvítek +3

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids1991Цитирований: 0
    ABI

  11. Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

    I. M. Fayazov, V. N. Sokolov

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids1992Цитирований: 0
    ABI

  12. High-energy ion implantation in polymer films

    L. Ya. Alimova, I.E. Djamaletdinova, T.S. Pugacheva +1

    СтатьяPolymer Nanocomposite Synthesis and IrradiationVacuum1992Цитирований: 0
    ABI

  13. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali1992Цитирований: 0
    ABI

  14. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

    I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

    Статья3D IC and TSV technologiesMaterials science forum1995Цитирований: 0
    ABI

  15. The simulation of silicon doping by ion bombardment

    T.S. Pugacheva, F.G. Dzhurabekova, S.A. Lem

    СтатьяIon-surface interactions and analysis1995Цитирований: 0
    ABI

  16. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    СтатьяSemiconductor materials and devicesTechnical Physics1997Цитирований: 0
    ABI

  17. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  18. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0
    ABI

  19. Applications of Ion Beam Methods in Silicide/Si and Silicide/GaAs Nanometre Structures

    Yanwen Zhang

    ДиссертацияIon-surface interactions and analysisLund University Publications (Lund University)1998Цитирований: 0
    ABI

  20. Ion-induced sputtering of a metal in the form of large clusters

    V. I. Matveev, S.F. Belykh, I. V. Berevkin

    СтатьяIon-surface interactions and analysisTechnical Physics1999Цитирований: 0
    ABI

  21. Regular relief on a silicon surface as a structural defect getter

    L. S. Berman, I. V. Grekhov, L. S. Kostina +3

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1999Цитирований: 0
    ABI

  22. Capacitance transient spectroscopy of radiation defects on Si-SiO 2 interface of silicon mis-structures

    Kh.Sh. Daliev, Sharifa B. Utamuradova, A.J. Akbarov

    СтатьяSilicon and Solar Cell Technologies1999Цитирований: 0
    ABI

  23. Low and High Energy Ion Beams in Nanotechnology

    Thomas Winzell

    ДиссертацияIon-surface interactions and analysisLund University Publications (Lund University)2000Цитирований: 0
    ABI

  24. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  25. Computer simulation of ion implantation with visual observation of the implantation profiles

    Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1

    СтатьяIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)2003Цитирований: 0
    ABI