Grigory Onushkin

Работ: 4

IOFFE Institute

1. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.603414

2. High Energy Resolution Detectors Based on 4H-SiC

   Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

   СтатьяParticle Detector Development and PerformanceMaterials science forum2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000096

3. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000141

4. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000233