Materials science forum

Работ: 86

Книжная серия · ISSN 0255-5476

Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy
М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2
СтатьяIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum2022Цитирований: 8
ABI
Treated Textile Electrostatic Properties Study
Irina Cherunova, Salikh Tashpulatov, Svetlana V. Kurenova
СтатьяMaterial Properties and ApplicationsMaterials science forum2020Цитирований: 5
ABI
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 2
ABI
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
ABI
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
ABI
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1
СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2005Цитирований: 2
ABI
System Analysis and Simulation of the Process of Destructive Hydrogenization of Deasphaltisate of Heavy Oil
Шерзод Набиуллаевич Атауллаев, Bobokhon Mavlanov, Садриддин Файзуллаевич Фозилов +2
СтатьяAdvanced Data Processing TechniquesMaterials science forum2022Цитирований: 2
ABI
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
ABI
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
ABI
High Energy Resolution Detectors Based on 4H-SiC
Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5
СтатьяParticle Detector Development and PerformanceMaterials science forum2005Цитирований: 1
ABI
Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals
V. A. Berezovets, I. I. Farbshteǐn, R. V. Parfeniev +2
СтатьяPhase-change materials and chalcogenidesMaterials science forum2006Цитирований: 1
ABI
Low Energy Ar<sup>+</sup> Ions Scattering from SiO<sub>2 </sub>(001)&lt;Ι10&gt; Surface under Grazing Incidence
Atabek S. Ashirov, Uchkun Kutliev, Soyibjon Xakimov +1
СтатьяIon-surface interactions and analysisMaterials science forum2022Цитирований: 1
ABI
Chemical and Mineralogical Compositions of Mortar Mixes of Architectural Monuments of Uzbekistan of the IX-XII Centuries
Inomjon Tojiev
СтатьяEconomic and Industrial DevelopmentMaterials science forum2022Цитирований: 1
ABI
Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers
Abdumalik Gaibov, Kutbiddin Ilovitddinovich Vakhobov, B.V. Ibragimova +2
Статья3D IC and TSV technologiesMaterials science forum2022Цитирований: 1
ABI
Mathematical Modeling of the Effect of TiC Nanopowder Particles on the Wear Resistance Properties of Low-Alloy Steel
Nozimjon Kholmirzaev, Nosir Saidmakhamadov, Jamshidbek Khasanov +7
СтатьяAluminum Alloys Composites PropertiesMaterials science forum2024Цитирований: 1
ABI
Improvement of the Technology of Melting of Low Alloy Steel Alloy in an Electric Arc Furnace
Nozimjon Kholmirzaev, Nodir Turakhodjaev, Nosir Saidmakhamadov +7
СтатьяMetallurgical Processes and ThermodynamicsMaterials science forum2024Цитирований: 1
ABI
Features of Impact of Ellipsoid Solid Bodies with Moving Surfaces
Valery I. Kondrashchenko, S P Titov, Artur Petrovich Kovrevsky +1
СтатьяMechanics and Biomechanics StudiesMaterials science forum2019Цитирований: 1
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 1
ABI
Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions
R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5
СтатьяPhase-change materials and chalcogenidesMaterials science forum2000Цитирований: 1
ABI
Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface
T. Kovyazina, A. A. Kutas, V.I. Khitko +5
СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum1993Цитирований: 0
ABI
Texture Development and Simulation of Inhomogeneous Deformation of FeCr during Hot Rolling
A. I. Fedoseev, Dierk Raabe, Günter Gottstein
СтатьяMetallurgy and Material FormingMaterials science forum1994Цитирований: 0
ABI
Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices
I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2
Статья3D IC and TSV technologiesMaterials science forum1995Цитирований: 0
ABI