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L. M. Sorokin

Работ: 7

Russian Academy of Sciences

  1. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

    N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
    ABI

  2. X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures

    В. В. Ратников, T. S. Argunova, K.E. Mironov +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1991Цитирований: 0
    ABI

  3. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

    R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

    СтатьяAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1993Цитирований: 0
    ABI

  4. Three-dimensional lattice of parallel-oriented tellurium nanoclusters in an opal matrix

    V. N. Bogomolov, L. M. Sorokin

    СтатьяMineralogy and Gemology StudiesTechnical Physics Letters1997Цитирований: 0
    ABI

  5. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  6. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

    Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

    СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0
    ABI

  7. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

    I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2008Цитирований: 0
    ABI