A. А. Lebedev

Работ: 26

Russian Academy of Sciences

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 1
ABI
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk
СтатьяSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum1993Цитирований: 0
ABI
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
ABI
Growth of SiC and GaN on Porous Buffer Layers
M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
ABI
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
ABI
Radiation Hardness of Silicon Carbide
A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
ABI
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
ABI
Modification of the Silicon Carbide by Proton Irradiation
Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2
СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2004Цитирований: 0
ABI
On Current Limitations in Porous SiC Applications
M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3
СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum2005Цитирований: 0
ABI
Influence of Irradiation on Excess Currents in SiC pn Structures
Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
ABI
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6
СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0
ABI
About the Nature of Recombination Current in 4H-SiC pn Structures
Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
ABI
Radiation Hard Devices Based on SiC
Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
ABI
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0
ABI
Carrier Removal in Electron Irradiated 4H and 6H SiC
M. Mikelsen, Ulrike Großner, J. H. Bleka +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2008Цитирований: 0
ABI
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
ABI
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2013Цитирований: 0
ABI

A. А. Lebedev

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

Growth of SiC and GaN on Porous Buffer Layers

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Radiation Hardness of Silicon Carbide

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

Modification of the Silicon Carbide by Proton Irradiation

On Current Limitations in Porous SiC Applications

Influence of Irradiation on Excess Currents in SiC pn Structures

6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

About the Nature of Recombination Current in 4H-SiC pn Structures

Radiation Hard Devices Based on SiC

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Carrier Removal in Electron Irradiated 4H and 6H SiC

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure