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N. B. Strokan

Работ: 10

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 1
    ABI

  2. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    СтатьяParticle Detector Development and PerformanceMaterials science forum2005Цитирований: 1
    ABI

  3. Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector

    N. B. Strokan

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  4. Behavior of epitaxial GaAs layers as α particle detectors

    V. M. Botnaryuk, Yu. V. Zhilyaev, А. М. Иванов +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  5. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  6. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  7. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  8. Radiation Hard Devices Based on SiC

    Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  9. 4H-SiC High Temperature Spectrometers

    Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0
    ABI

  10. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
    ABI