On the generation of radiation defects by accelerated ions in silicon

The introduction of centers of generation of charge carriers in pure Si is examined in the framework of the interaction of nonequilibrium defects and charge carriers directly in the track of an ion. An experiment on a particles with energies of 1.0–5.0 MeV is supplemented by the results of a numerical simulation of the stopping of such particles in Si. It is shown that the primary defects arising at the end of the track form a smaller number of generation centers. This is explained by the trapping of components of Frenkel pairs of charge carriers, the concentration of which in the track undergoes a 3-fold increase by the end of the range. Charge exchange between vacancies and interstitial atoms both accelerates recombination and lowers the number of primary defects participating in the subsequent complex-formation.

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