V. B. Shuman

Работ: 5

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Carrier transport in a diode base with locally nonuniform recombination properties

   А. В. Иванов, N. B. Strokan, V. B. Shuman

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 1

   ABIABI:AkademIndex/openalex/1997.article.000150

2. Direct bonding of silicon wafers with a diffusion layer

   V. B. Voronkov, E. G. Guk, В. А. Козлов +1

   Статья3D IC and TSV technologiesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000270

3. Effect of anodic etching of heavily doped silicon on the location of the plasma minimum

   V. B. Shuman

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000192

4. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

   T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0

   ABIABI:AkademIndex/openalex/2004.article.000164

5. Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

   Yu. A. Astrov, L. М. Portsel, А. N. Lodygin +2

   СтатьяSpectroscopy and Laser ApplicationsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000174