Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

T. S. Argunova

Работ: 9

Ioffe Physicotechnical Institute RAS

  1. Distribution of Defects in InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub>-InAs DHs

    T. S. Argunova, R. N. Kyutt, B. A. Matveev +3

    СтатьяAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1991Цитирований: 0
    ABI

  2. Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs

    B. Yavich, I. N. Kochnev, P. P. Buinov +4

    СтатьяSemiconductor materials and devicesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1991Цитирований: 0
    ABI

  3. X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures

    В. В. Ратников, T. S. Argunova, K.E. Mironov +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1991Цитирований: 0
    ABI

  4. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

    R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

    СтатьяAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1993Цитирований: 0
    ABI

  5. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

    I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

    Статья3D IC and TSV technologiesMaterials science forum1995Цитирований: 0
    ABI

  6. Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique

    T. S. Argunova, M. Yu. Gutkin, L. S. Kostina +3

    СтатьяThin-Film Transistor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1999Цитирований: 0
    ABI

  7. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  8. Structural Transformation of Dislocated Micropipes in Silicon Carbide

    M. Yu. Gutkin, A. G. Sheĭnerman, T. S. Argunova +4

    СтатьяAdvanced Surface Polishing TechniquesMaterials science forum2004Цитирований: 0
    ABI

  9. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

    I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2008Цитирований: 0
    ABI