L. S. Kostina

Работ: 4

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

   I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

   Статья3D IC and TSV technologiesMaterials science forum1995Цитирований: 0

   ABIABI:AkademIndex/openalex/1995.article.000102

2. Regular relief on a silicon surface as a structural defect getter

   L. S. Berman, I. V. Grekhov, L. S. Kostina +3

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000131

3. Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique

   T. S. Argunova, M. Yu. Gutkin, L. S. Kostina +3

   СтатьяThin-Film Transistor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000171

4. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000211