Regular relief on a silicon surface as a structural defect getter
L. S. BermanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. V. GrekhovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgL. S. KostinaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. I. BelyakovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. D. KimA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. C. KimA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
An investigation was made to determine how a regular relief on the silicon surface influences gettering in silicon-silicon-dioxide structures. The regular relief was created by a photolithographic technique before oxidation and comprised an orthogonal network of overlapping bands. The gettering was determined from the isothermal relaxation of the capacitance of a silicon-silicon-dioxide structure after switching from strong inversion to even stronger inversion. It is shown that a regular relief at the silicon-silicon-dioxide interface is an effective getter at a depth of several hundred micron.
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