Regular relief on a silicon surface as a structural defect getter

An investigation was made to determine how a regular relief on the silicon surface influences gettering in silicon-silicon-dioxide structures. The regular relief was created by a photolithographic technique before oxidation and comprised an orthogonal network of overlapping bands. The gettering was determined from the isothermal relaxation of the capacitance of a silicon-silicon-dioxide structure after switching from strong inversion to even stronger inversion. It is shown that a regular relief at the silicon-silicon-dioxide interface is an effective getter at a depth of several hundred micron.

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