I. V. Grekhov

4 ta ish

Ioffe Institute of RAS

1. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

   I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

   Maqola3D IC and TSV technologiesMaterials science forum19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000102

2. Deep diffusion doping of macroporous silicon

   E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000045

3. Regular relief on a silicon surface as a structural defect getter

   L. S. Berman, I. V. Grekhov, L. S. Kostina +3

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000131

4. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000211