Deep diffusion doping of macroporous silicon
E. V. AstrovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. B. VoronkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. V. GrekhovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. В. НащекинA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA.G. TkachenckoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Annotatsiya
An investigation is made of the diffusion of boron and phosphorus impurities in macroporous silicon with a regular structure of deep cylindrical pores, for which through doping of the walls was achieved. The ∼150 μm layers obtained were quasiuniformly doped and had a planar diffusion front, and their electric parameters were very similar to those of the doped single crystal. It is demonstrated that deep diffusion of phosphorus may be used to fabricate n-n + structures.
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