E. I. Belyakova

2 ta ish

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Regular relief on a silicon surface as a structural defect getter

   L. S. Berman, I. V. Grekhov, L. S. Kostina +3

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000131

2. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000211