L. S. Kostina

4 ta ish

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

   I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

   Maqola3D IC and TSV technologiesMaterials science forum19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000102

2. Regular relief on a silicon surface as a structural defect getter

   L. S. Berman, I. V. Grekhov, L. S. Kostina +3

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000131

3. Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique

   T. S. Argunova, M. Yu. Gutkin, L. S. Kostina +3

   MaqolaThin-Film Transistor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000171

4. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000211