Anatoly M. Strel’chuk

Работ: 25

A.F. Ioffe Physicotechnical Institute RAS

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
ABI
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1
СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2005Цитирований: 2
ABI
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 1
ABI
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk
СтатьяSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum1993Цитирований: 0
ABI
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
ABI
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
ABI
Radiation Hardness of Silicon Carbide
A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
ABI
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
ABI
Influence of Irradiation on Excess Currents in SiC pn Structures
Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
ABI
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6
СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0
ABI
Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
ABI
About the Nature of Recombination Current in 4H-SiC pn Structures
Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
ABI
Radiation Hard Devices Based on SiC
Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
ABI
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2013Цитирований: 0
ABI
Recombination Processes in 4H-SiC pn Structures
Anatoly M. Strel’chuk, Baptiste Bérenguier, E. B. Yakimov +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2016Цитирований: 0
ABI
Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures
Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3
СтатьяSemiconductor materials and devicesMaterials science forum2018Цитирований: 0
ABI

Anatoly M. Strel’chuk

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Radiation Hardness of Silicon Carbide

Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

Influence of Irradiation on Excess Currents in SiC pn Structures

6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

About the Nature of Recombination Current in 4H-SiC pn Structures

Radiation Hard Devices Based on SiC

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

Recombination Processes in 4H-SiC pn Structures

Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures