Anatoly M. Strel’chuk
Работ: 25
A.F. Ioffe Physicotechnical Institute RAS
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk
СтатьяSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum1993Цитирований: 0ABI6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy
Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6
СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0ABI