M. M. Anikin

Работ: 1

1. Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

   M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk

   СтатьяSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum1993Цитирований: 0

   ABIABI:AkademIndex/openalex/1993.article.000131