Статья

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

Evgenia V. KalininaIoffe Physicotechnical Institute RASG. KholuyanovIoffe Physicotechnical Institute RASAnatoly M. Strel’chukA.F. Ioffe Physicotechnical Institute RASD. V. DavydovRussian Academy of SciencesAnders HallénKTH Royal Institute of TechnologyAndrey O. KonstantinovAlexander Y. Nikiforov

Materials science forumbook series2004en

ABI

Аннотация

The radiation-induced defect formation in high purity 4H-SiC CVD epitaxial layers and changes in the electrical properties of diode structures based on its after irradiation with different fluences ...

Перевод пока недоступен

Темы

Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies Semiconductor materials and devices

Идентификаторы

DOI: 10.4028/www.scientific.net/msf.457-460.705

Цитирования и источники

Цитирований: 0Использованных источников: 10

Показатели — AkademScholar