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Andrey O. Konstantinov

Работ: 8

  1. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2005Цитирований: 2
    ABI

  2. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
    ABI

  3. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
    ABI

  4. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    СтатьяParticle Detector Development and PerformanceMaterials science forum2005Цитирований: 1
    ABI

  5. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  7. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  8. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI