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A. S. Zubrilov

Работ: 7

Russian Academy of Sciences

  1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

    N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 2
    ABI

  2. Optically Transparent 6H-Silicon Carbide

    A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

    СтатьяThin-Film Transistor TechnologiesMaterials science forum1998Цитирований: 0
    ABI

  3. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  4. Growth of SiC and GaN on Porous Buffer Layers

    M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
    ABI

  5. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  7. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

    A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0
    ABI