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N.S. Savkina

Работ: 12

Russian Academy of Sciences

  1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
    ABI

  2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
    ABI

  3. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
    ABI

  4. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

    N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
    ABI

  5. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
    ABI

  6. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 1
    ABI

  7. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  8. Growth of SiC and GaN on Porous Buffer Layers

    M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
    ABI

  9. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
    ABI

  10. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  11. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  12. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI